document number: 93005 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-sep-08 1 hyperfast rectifier, 15 a fred pt tm 15eth06s/15eth06-1 vishay high power products features ? hyperfast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? single die center tap module ? designed and qualified for industrial level description/applications state of the art hyperfast reco very rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac-dc section of smps, inverters or as freewheeling diodes. the extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. product summary t rr (typical) 22 ns i f(av) 15 a v r 600 v 15eth06s 15eth06-1 anode 1 3 base cathode 2 n/c d 2 pak to-262 anode 1 3 2 n/c absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 140 c 15 a non-repetitive peak surge current i fsm t j = 25 c 120 peak repetitive forward current i fm 30 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 15 a - 1.8 2.2 i f = 15 a, t j = 150 c - 1.3 1.6 reverse leakage current i r v r = v r rated - 0.2 50 a t j = 150 c, v r = v r rated - 30 500 junction capacitance c t v r = 600 v - 20 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93005 2 revision: 05-sep-08 15eth06s/15eth06-1 vishay high power products hyperfast rectifier, 15 a fred pt tm dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 22 30 ns i f = 15 a, di f /dt = 100 a/s, v r = 30 v - 28 35 t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 390 v -29- t j = 125 c - 75 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7 - reverse recovery charge q rr t j = 25 c - 57 - c t j = 125 c - 300 - reverse recovery time t rr t j = 125 c i f = 15 a di f /dt = 800 a/s v r = 390 v -51-ns peak recovery current i rrm -20- a reverse recovery charge q rr - 580 - nc thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -1.01.3 c/w thermal resistance, junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style d 2 pak 15eth06s case style to-262 15eth06-1
document number: 93005 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-sep-08 3 15eth06s/15eth06-1 hyperfast rectifier, 15 a fred pt tm vishay high power products fig. 1 - typical forward voltage dr op characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 i f - instantaneous forward current (a) v f - forward voltage drop (v) t j = 175 c t j = 150 c t j = 25 c 0 100 200 300 400 500 600 i r - reverse current (a) v r - reverse voltage (v) 0.001 0 0.01 0.1 1 10 100 1000 t j = 100 c t j = 175 c t j = 150 c t j = 125 c t j = 25 c 1000 100 10 0 100 200 300 400 500 600 c t - junction capacitance (pf) v r - reverse voltage (v) t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single p u lse (thermal resistance) . . p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93005 4 revision: 05-sep-08 15eth06s/15eth06-1 vishay high power products hyperfast rectifier, 15 a fred pt tm fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 120 130 140 150 160 170 180 see note (1) square wave (d = 0.50) 80 % rated v r applied 110 dc 0 5 10 15 20 25 average power loss (w) i f(av) - average forward current (a) 0 5 10 15 20 25 30 35 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rms limit 100 0 100 1000 t rr (ns) di f /dt (a/s) 20 40 60 80 i f = 30 a i f = 15 a v r = 390 v t j = 125 c t j = 25 c 1000 0 100 1000 q rr (nc) di f /dt (a/s) 200 400 600 800 i f = 30 a i f = 15 a v r = 390 v t j = 125 c t j = 25 c
document number: 93005 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-sep-08 5 15eth06s/15eth06-1 hyperfast rectifier, 15 a fred pt tm vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adj u st q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of c u rrent thro u gh zero crossing (2) i rrm - peak re v erse reco v ery c u rrent (3) t rr - re v erse reco v ery time meas u red from zero crossing point of negati v e going i f to point w here a line passing thro u gh 0.75 i rrm and 0.50 i rrm extrapolated to zero c u rrent. (4) q rr - area u nder c u r v e defined b y t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of c u rrent d u ring t b portion of t rr
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93005 6 revision: 05-sep-08 15eth06s/15eth06-1 vishay high power products hyperfast rectifier, 15 a fred pt tm ordering information table device code 1 - current rating (15 a) 2 - e = single diode 3 - t = to-220, d 2 pak 4 - h = hyperfast rectifier 5 - voltage rating (06 = 600 v) 6 - s = d 2 pak -1 = to-262 7 - none = tube (50 pieces) 6 trl = tape and reel (left oriented, for d 2 pak package) trr = tape and reel (right oriented, for d 2 pak package) 8 - none = standard production pbf = lead (pb)-free 5 13 24 678 15 e t h 06 s trl - links to related documents dimensions http://www.vishay.com/doc?95014 part marking information http://www.vishay.com/doc?95008 packaging information http://www.vishay.com/doc?95032
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